ST-Ericsson brings PC speeds to mobile devices: first 3 GHz smartphone prototype demo at Mobile World Congress

February 20, 2013, press release, via LTE-Depot. L8580 is the fastest, coolest, integrated Application Processor and LTE Advanced Modem platform based on 28nm FD-SOI process technology.

Geneva, February 20, 2013 – Next week at Mobile World Congress in Barcelona, ST-Ericsson, a world leader in wireless platforms and semiconductors, will demo the NovaThor™ L8580 integrated smartphone platform with a 3Ghz eQuad™ application processor and a multimode LTE Advanced modem supporting Carrier Aggregation. By demonstrating the L8580 at this speed, ST-Ericsson is revealing the world’s fastest smartphone processor and validating the company as an innovator in the wireless market.

“Our next-generation NovaThor platform is creating a disruption for the wireless industry by combining some of the most advanced technologies on the market, including STMicroelectronics’ 28nm FD-SOI process technology, to deliver a real industry breakthrough in terms of speed, power consumption and overall performance,” said Didier Lamouche, President and CEO of ST-Ericsson. “We focused on innovation on real world use cases and delivered a ModAp that lets applications run significantly faster – up to 35% faster CPU while GPU and multimedia accelerators run 20% faster. With the NovaThor L8580, ST-Ericsson is bringing speeds normally reserved for the PC market to mobile devices.”

The initial commercial version of the NovaThor L8580 integrates an eQuad 2.5GHz processor based on ARM Cortex-A9’s, a powerful Imagination PowerVR™ SGX544 GPU running at 600Mhz and an advanced multimode LTE modem supporting Carrier Aggregation on a single 28nm FD-SOI die. 

The NovaThor L8580 supports 3GPP Release 10, LTE category 4, with downlink speeds up to 150Mbps. It supports LTE-FDD, LTE-TDD, HSPA+, GSM and TD-SCDMA in the same chipset as well as VoLTE and HD voice. With up to 17 bands in the same device and a single radio for Carrier

Aggregation the L8580 addresses device manufacturers’ needs for a simple and cost effective solution to build global LTE smartphones with the smallest number of manufacturing variants.

“In addition to speed and multiband support, the NovaThor L8580 consumes 35% less power than rival architectures at comparable high frequencies. And last but not least, the L8580’s ground breaking 0.6V low power mode consumes 50% less power at 1GHz redefining the active standby experience for users of mobile devices while adding hours of battery life,” continued Lamouche. “All of these factors highlight the innovation and product differentiation that ST-Ericsson can now deliver to its customers.”

The complete platform includes outstanding multimedia performance and pre-integrated connectivity with support for Bluetooth™, GNSS (GPS+ GLONASS), FM, WLAN, WiFi Direct™, Miracast™ and NFC. With ST-Ericsson’s connectivity solutions, CG2905 and CW1260, the platform comes optimized for wireless radio co-existence and low power consumption.

The NovaThor L8580 is pin-to-pin and Software compatible with ST-Ericsson’s first generation NovaThor LTE multimode platform the L8540.

The NovaThor L8580 will be demoed at Mobile World Congress in the ST-Ericsson Public Booth in Hall 7 (#E111) and, by appointment only, in our Private Pavilion in Hall 2 (#D90).

==

Qualcomm RF360 Front End Solution Enables Single, Global LTE Design for Next-Generation Mobile Devices

New WTR1625L and RF Front End Chips Harness Radio Frequency Band Proliferation, Enable OEMs to Develop Thinner, More Power-Efficient Devices with Worldwide 4G LTE Mobility

SAN DIEGO – February 21, 2013 – Qualcomm Incorporated (NASDAQ: QCOM) today announced that its wholly-owned subsidiary, Qualcomm Technologies, Inc., introduced the Qualcomm RF360 Front End Solution, a comprehensive, system-level solution that addresses cellular radio frequency band fragmentation and enables for the first time a single, global 4G LTE design for mobile devices. Band fragmentation is the biggest obstacle to designing today’s global LTE devices, with 40 cellular radio bands worldwide. The Qualcomm RF front end solution comprises a family of chips designed to mitigate this problem while improving RF performance and helping OEMs more easily develop multiband, multimode mobile devices supporting all seven cellular modes, including LTE-FDD, LTE-TDD, WCDMA, EV-DO, CDMA 1x, TD-SCDMA and GSM/EDGE. The RF front end solution includes the industry’s first envelope power tracker for 3G/4G LTE mobile devices, a dynamic antenna matching tuner, an integrated power amplifier-antenna switch, and an innovative 3D-RF packaging solution incorporating key front end components. The Qualcomm RF360 solution is designed to work seamlessly, reduce power consumption and improve radio performance while reducing the RF front end footprint inside of a smartphone by up to 50 percent compared to the current generation of devices. Additionally, the solution reduces design complexity and development costs, allowing OEM customers to develop new multiband, multimode LTE products faster and more efficiently. By combining the new RF front end chipsets with Qualcomm Snapdragon all-in-one mobile processors and Gobi™ LTE modems, Qualcomm Technologies can supply OEMs with a comprehensive, optimized, system-level LTE solution that is truly global.

As mobile broadband technologies evolve, OEMs need to support 2G, 3G, 4G LTE and LTE Advanced technologies in the same device in order to provide the best possible data and voice experience to consumers no matter where they are.

“The wide range of radio frequencies used to implement 2G, 3G and 4G LTE networks globally presents an ongoing challenge for mobile device designers. Where 2G and 3G technologies each have been implemented on four to five different RF bands globally, the inclusion of LTE brings the total number of cellular bands to approximately 40,” said Alex Katouzian, senior vice president of product management, Qualcomm Technologies, Inc. “Our new RF devices are tightly integrated and will allow us the flexibility and scalability to supply OEMs of all types, from those requiring only a region-specific LTE solution, to those needing LTE global roaming support.”

The Qualcomm RF360 front end solution also represents a significant technological advancement in overall radio performance and design, and it comprises the following components: 

• Dynamic Antenna Matching Tuner (QFE15xx) – The world’s first modem-assisted and configurable antenna-matching technology extends antenna range to operate over 2G/3G/4G LTE frequency bands, from 700-2700 MHz. This, in conjunction with modem control and sensor input, dynamically improves the antenna’s performance and connection reliability in the presence of physical signal impediments, like the user’s hand.
• Envelope Power Tracker (QFE11xx) – The industry’s first modem-assisted envelope tracking technology designed for 3G/4G LTE mobile devices, this chip is designed to reduce overall thermal footprint and RF power consumption by up to 30 percent, depending on the mode of operation. By reducing power and heat dissipation, it enables OEMs to design thinner smartphones with longer battery life.
• Integrated Power Amplifier / Antenna Switch (QFE23xx) – The industry’s first chip featuring an integrated CMOS power amplifier (PA) and antenna switch with multiband support across 2G, 3G and 4G LTE cellular modes. This innovative solution provides unprecedented functionality in a single component, with smaller PCB area, simplified routing and one of the smallest PA/antenna switch footprints in the industry.
• RF POP™ (QFE27xx) – The industry’s first 3D RF packaging solution, integrates the QFE23xx multimode, multiband power amplifier and antenna switch, with all the associated SAW filters and duplexers in a single package. Designed to be easily interchangeable, the QFE27xx allows OEMs to change the substrate configuration to support global and/or region-specific frequency band combinations. The QFE27xx RF POP enables a highly integrated multiband, multimode, single-package RF front end solution that is truly global.

OEM products featuring the complete Qualcomm RF360 Solution are anticipated to be launched in the second half of 2013.

Qualcomm also announced today a new RF transceiver chip, the WTR1625L. The chip is the first in the industry to support carrier aggregation with a significant expansion in the number of active RF bands. The WTR1625L can accommodate all cellular modes and 2G, 3G and 4G/LTE frequency bands and band combinations that are either deployed or in commercial planning globally. Additionally, it has an integrated, high-performance GPS core that also supports GLONASS and Beidou systems. The WTR1625L is tightly integrated in a wafer scale package and optimized for efficiency, offering 20 percent power savings compared to previous generations. The new transceiver, along with the Qualcomm RF360 front end chips, is integral to Qualcomm Technologies Inc.’s single-SKU World Mode LTE solution for mobile devices that are expected to launch in 2013. 

Broadcom Introduces Industry's Smallest 4G LTE-Advanced Modem for Smartphone and Tablet Market

New Solution with Integrated Radio and Support for All 3GPP Standards - including TD-SCDMA - Enables Global Roaming and Carrier Aggregation

IRVINE, Calif., Feb. 12, 2013 /PRNewswire/ --

News Highlights:

• 28nm 4G LTE modem with integrated radio and cellular baseband reduces board area by approximately 35 percent
• Solution supports all 3GPP standards technologies including 4G LTE-Advanced with carrier aggregation, HSPA+, TD-SCDMA and EDGE/GSM
• Integrated IMS/VoLTE capability allows operators to deploy HD voice and other advanced features 
• Carrier aggregation enables operators to combine frequency bands and deliver peak 4G LTE speeds 

Broadcom Corporation (NASDAQ: BRCM), a global innovation leader in semiconductor solutions for wired and wireless communications, today introduced the industry's smallest 4G LTE-Advanced modem. Designed for the 4G LTE market, Broadcom's multi-mode, multi-band solution — the BCM21892 — delivers the features, power and performance capabilities for the development of next generation 4G LTE smartphones and tablets. Broadcom will showcase its 4G LTE innovations at the upcoming Mobile World Congress show in Barcelona, February 25-28. For more news, visit Broadcom's Newsroom.

Compliant with all 3GPP specifications, the BCM21892 combines a full-featured cellular baseband with a world-band radio in a footprint that is approximately 35 percent smaller than current industry solutions. Advanced power management techniques save up to 25 percent of the power typically consumed during data transmissions to the network. The new modem also supports LTE Category 4 speeds of 150Mbps[1], operates in any 3GPP network and performs seamless hand-offs between the various 4G LTE, 3G and 2G interface technologies.

"Broadcom's new 4G LTE modem combined with our Wi-Fi, Bluetooth, GPS and NFC technologies gives OEMs all the communications technologies needed to build advanced devices that will offer consumers the features, speed and functionality they demand in their next smartphone purchase," said Robert A. Rango, Broadcom Executive Vice President and General Manager, Mobile and Wireless Group. "Broadcom's 4G LTE modem will also help carriers drive new 4G LTE features, such as carrier aggregation, into commercial networks."

According to Peter Cooney, ABI Research, "4G LTE coverage is clearly seen as a competitive differentiator by carriers to meet consumer demand for better performance, and as network rollouts accelerate worldwide, manufacturers are responding with products for these markets. Based on its success in executing and integrating baseband processors, Broadcom is well positioned to deliver the latest mobile broadband technologies for these next generation devices."

To support operators' evolution to 4G LTE networks, the BCM21892 features the following:

• A baseband with support for all current 3GPP standards technologies including LTE FDD and TDD, LTE-Advanced with carrier aggregation, HSPA+, TD-SCDMA and EDGE/GSM.
• An integrated world-band radio that can support virtually any designated 3GPP LTE frequency band and combination, a critical capability as operators prepare their networks for 4G LTE roaming. The radio also deploys advanced power management techniques that can save up to 25 percent of the power typically used when sending data to the network.
• A Voice over LTE (VoLTE) solution that enables high-definition voice calls over a mobile broadband connection — a key requirement of operators as they transition from legacy networks. Broadcom's VoLTE service consumes approximately 40 percent less power than a comparable WCDMA voice call. 
• Enhanced interoperability with Broadcom's wireless coexistence technology, which minimizes the possibility of radio interference between Wi-Fi, Bluetooth and 4G LTE, and enables carriers to provide a richer Wi-Fi offload experience.
• Ability to interface with a broad range of stand-alone applications processors, allowing OEMs to design the 4G LTE solution into a wide variety of mobile devices.

Availability:

BCM21892 is now sampling to early access customers, with anticipated production in 2014.

For ongoing news, visit Broadcom's Newsroom, read the B-Connected Blog, or visit Facebook or Twitter. And to stay connected, subscribe to Broadcom's RSS Feed.

==

More about Broadcom

Altair selected by Netgear to power its mobile broadband Router Family of LTE Routers

The NETGEAR-Altair Mobile Broadband Routers Will Enable Carriers to Deliver Excellent Broadband User Experience Alongside Toll-Quality Voice over LTE

HOD HASHARON, Israel, January 8, 2013, via LTE-depot — Altair Semiconductor (www.altair-semi.com), the world’s leading developer of ultra-low power, small footprint and high performance 4G LTE chipsets, today announced that its FourGee-3100/6202 chipset has been selected by NETGEAR to power its line of LTE routers. The first product that is being developed under the combined efforts of NETGEAR and Altair is the Mobile Broadband Router (MBR1518), a TD-LTE router designed for home and small-office use that boasts a high performance Wireless LAN, USB attached storage and ruggedized firewall.

Given the enhanced spectral efficiencies, available spectrum, and volume synergies with LTE-FDD; public fixed wireless and mobile operators are migrating from WiMAX to TD-LTE, resulting in rapid growth of TD-LTE networks.The MBR1518 TD-LTE router addresses this emerging market. Simultaneous growth in TD- and FDD-LTE also demands products that enable operators to seamlessly migrate from one technology to another. NETGEAR and Altair are focused on delivering such products.

“By teaming up with Altair to develop high speed mobile routers, we will be delivering, to our service provider customers, highly integrated, feature-rich single mode LTE and Voice over LTE products,” said Michael Clegg, Senior Vice President and General Manager, Service Provider Business at NETGEAR.

“We are excited to join forces with NETGEAR, a proven leader in fixed broadband technology, and we look forward to working closely with the NETGEAR team in bringing to market innovative and high-performance LTE products,” said Eran Eshed, Co-Founder and Vice President of Marketing of Altair. “The exclusion of 3G technology in favor of LTE will allow us to significantly reduce the overall cost of the device while maintaining the superior performance and user experience of 4G LTE.”

Trials of the MBR1518 are currently underway and service providers can expect a broad product roll-out in 2013.

Chipsets: Silicon Motion Technology Corp (SIMO) - LTE adoption will drive Growth

Silicon Motion Technology Corporation (SIMO) is a fabless semiconductor company based in Taiwan. Unfortunately, for much of 2012, SIMO has been a great company but a terrible stock.

During 2012 the company has quietly built an impressive array of new products (Samsung LTE transceivers and SoC and embedded controllers for major NAND flash vendors). Sales of these products only accounted for 10% of revenue in 2011, but "increased 75% sequentially and accounted for 32% of total revenues" in second quarter of 2012(From Q2 statement). Below are three reasons LTE adoption will fuel impressive growth and make SIMO a potential acquisition target.

//seekingalpha.com 

Nvidia pushes 4G LTE compatible Tegra processors, puts pressure on Qualcomm

While this Icera LTE modem is a separate component, Nvidia has new processors -- codenamed "Wayne" -- in the pipeline for next year that will have integrated Icera 410 LTE modems. Integration of the modem with the processor will simplify manufacturer's production lines, keeping costs down.

And Nvidia isn't planning to stand still either, with plans to integrate the more advanced Icera 500 LTE modem into future mobile processors.

//zdnet.com 

Intel recruiting into LTE/HSPA modem team

Intel Mobile and Communications Group (MCG) is expanding its research and development activities in the field of mobile communication platforms to fulfill our strategic target to become the leader in mobile platforms. We are planning to setup a complete modem team focused on HSDPA and LTE in the San Diego market. Sound amazing? Join us!  

//intel.com

Mindspeed Set For LTE Speed

I have identified one company in the small cell wireless base station market that stands to gain by this network build out. The company is Mindspeed Technologies, Inc. (MSPD) which is a fabless chip design company headquartered in Newport Beach, California. With its roots as part of Rockwell's Semiconductor division, it was spun off as a wholly owned subsidiary of Conexant in 1999 and later launched as a standalone public company in 2003, listed on NASDAQ as MSPD.

The company designs and sells a wide range of silicon chips for network infrastructure of the wired and wireless communications industry.

Small cell wireless LTE is no longer a niche technology as it is now being deployed and has become an integral part of the major carrier's network plans. There are currently 5 types of small cell base stations that Mindspeed provides SoC's for.

//seekingalpha.com

Qualcomm is dominating LTE chips market, but Intel plan to strike back?

Intel will be able to put an unlimited number of bands on a single LTE modem, possible as soon as late next year. Apple used Intel's modems up until 2010, when it switched over to Qualcomm in part to get Verizon and Sprint LTE compatibility. There is Qualcomm MDM9615 modem is in the Apple iPhone 5. 

Modems are only half of the solution, though. Dermot O'Shea, co-founder of antenna firm Taoglas, said antenna design gets difficult when you're covering such a wide range of frequencies. Active antennas for smartphones, which have just started to hit the market this year, can adapt to different bands without being huge, although they add to the cost and complexity of smartphones. We're likely to see more of them next year.
//pcmag.com

Qualcomm Second Generation LTE Chipsets Enable High-Speed Wireless Connectivity in Japan

Qualcomm Incorporated today announced its industry-leading Gobi™ 4G/LTE modem, the MDM9215™, has been implemented in the SoftBank 102Z, a new mobile broadband router for Japan. The device, designed by Chinese telecommunications provider ZTE, represents the second generation of Gobi-powered 4G/LTE products from SoftBank Mobile and the first to feature MDM9x15™ chipsets built on the 28nm manufacturing process. //embedded.com 

Well... Qualcomm MDM is in the Apple, Qualcomm MDM is in the ZTE. And no more in Huawei. Balong or die?

LTE chip inside the iPhone 5 is Qualcomm’s MDM9615M

"The LTE chip inside the iPhone 5 is Qualcomm’s MDM9615M. It’s a very impressive chip, built on a 28nm manufacturing process which makes for low power consumption yet still supports LTE in both FDD and TDD flavours and 3G in DC-HSPA+, EV-DO Rev-B and TD-SCDMA guise – the latter making it well suited for China". //lteconference.wordpress.com

SoC: Qualcomm Snapdragon Pro S4 - new family

Qualcomm announced new set of its SoC - Qualcomm Snapdragon Pro S4 (actually it was just S4 before).  

• Technology: CMOS
• Process: 28 nm
• CPU Structure: RISC
• Width of Machine Word: 32 bit
• Primary (RAM) data bus: 32 bit
• Supported Instruction: ARMv7 
• quad-core "Krait" SoC
• 1.5 GHz - recommended min., 1.7 GHz - recommended max.
• level 1 cache per core - 32 KiB data cash / 32 KiB instruction cache
• level 2 cache per core - 1024 KiB
• Technology: CMOS 
• aSMP (Asynchronous Symmetric Multiprocessing) - enables each core to power up and down independently as required, allowing for maximum performance combined with good battery life.
• support resolutions up to 2048x1536 QXVGA
• up to 20 mpix camera (up to 1080p video encode/decode), up to 3 cameras, stereoscopic 3D capture support
• 3G/LTE toggling
• LPDDR2 SD RAM interface
• Adreno 320 GPU (twice as fast as Adreno 225)
• Hexagon QDSP6 500 MHz
• GPSOneGen 8A with GLONASS

//zdnet.com //mforum.ru

Qualcomm APQ8064 Snapdragon S4 PRO is the SoC of the new spersmartphone LG Optimus G. 

GCT Semiconductor LTE chipset GDM7240 is being used by Yota (Russia)

GCT Semiconductors announced that its GDM7240 single chip LTE solution is beign used in the Yota LTE USB dongle. The volume of dongles "sold" (Yota replace WiMAX devices for its WiMAX subscribers free of charge) is about 400 thousand.

* *

GCT Semiconductor LTE Single-Chip Adopted
by Russian LTE Operator Yota

San Jose, CA – August 15, 2012 — GCT® Semiconductor, a leading designer and supplier of advanced 4G mobile semiconductor solutions, today announced that its market-proven LTE single-chip solution,GDM7240, is being used in the Yota LTE USB dongle, currently commercially available with Yota in Russia. The commercialization of this USB dongle is the result of close collaboration between GCT and Yota following GCT’s success in meeting all the requirements for Yota’s LTE network. This device has been available commercially in select Russian cities since January 2012 and will be rolled out across the Yota LTE network over the next several quarters.

GCT is the first LTE single-chip vendor to penetrate the LTE market in Russia, and GCT continues to work with Yota to develop new devices such as USB dongles, CPEs and mobile routers.

“When Yota decided to switch from WiMAX to LTE, it selected GCT as its first LTE chipset vendor,” said Dr. Kyeongho “KH” Lee, President and Chief Executive Officer of GCT Semiconductor, Inc. “Using a proven, high performing solution that other operators had already adopted successfully in their initial launches was a key part of Yota’s decision to use GCT’s GDM7240. We look forward to continuing our close collaboration with Yota, and supporting them with their LTE network expansion.”

GCT’s GDM7240 is currently commercially deployed with the leading LTE operators in the U.S. and various other markets worldwide. GDM7240 is the most mature LTE single-chip solution available today, ideally suited to meet the rapidly growing demand for higher data speed, higher mobility and enhanced applications.

About Yota

A Russian Internet service provider, Yota built and launched the first LTE network in five Russian cities: Moscow, Krasnodar, Sochi, Novosibirsk, and Samara. www.yota.ru.

About GCT Semiconductor, Inc.

GCT Semiconductor is a leading fabless designer and supplier of advanced 4G mobile solutions. GCT’s products are system-on-a-chip solutions that integrate radio frequency, baseband modem and digital signal processing functions onto a single die for the 4G LTE and WiMAX markets. GCT was the first to commercialize single-chip solutions for LTE and WiMAX. GCT’s proprietary technology and system-level expertise enable it to provide complete 4G platform solutions, which are differentiated by their small form factors, low power consumption, high performance, high reliability and cost effectiveness. For more information, visit www.gctsemi.com.

RFMD Commences LTE Shipments to Samsung

RFMD announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

The RFMD's power amplifiers product family covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 3 (1800), 4 (AWS), 7 (2.5-2.6 GHz), 11 (Japan 1500), 13 (US 700), 17 (US 700), 20 (800 Digital Dividend), and 21 (Japan 1500 2) — addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations.

* * *

GREENSBORO, N.C., Aug. 13, 2012 (GLOBE NEWSWIRE) via LTE Depot -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

RFMD expects to supply the majority of the 3G and 4G power amplifiers in Samsung's highest volume smartphones this calendar year. RFMD already supports multiple feature phones, smartphones and tablets for Samsung with a broad range of products, including PowerSmart® power platforms, ultra-high efficiency power amplifiers, and other critical high-performance components. This most recent 4G LTE smartphone to be supported by RFMD features a dual core multi-mode 3G/LTE modem.

Eric Creviston, president of RFMD's Cellular Products Group, said, "These shipments of RFMD's ultra-high efficiency 3G/4G power amplifiers to Samsung underscore our strong design momentum in next-generation mobile devices and our early market share leadership in the rapidly growing LTE market. We currently forecast robust growth in LTE in calendar 2012, as LTE devices grow from approximately 20 million units in calendar 2011 to greater than 100 million units in calendar 2012."

RFMD's ultra-high efficiency 3G and 4G LTE PAs enable increased battery life in smartphones while reducing the thermal impact of advanced data-based applications, including web surfing, video calling and internet radio. The product family covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 3, 4, 7, 11, 13, 17, 20, and 21 — addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations.

RFMD supplies the industry's broadest portfolio of 3G and 4G LTE power amplifier solutions, ranging from single-mode/single-band components to complete multimode/multi-band front end reference designs. RFMD's 3G and 4G LTE product portfolio is aligned with the world's leading baseband chipset providers.